1/8 october 2000 STW80NE06-10 n-channel 60v - 0.0085 w - 80a to-247 stripfet? power mosfet (1) i sd 80a, di/dt 300a/s, v dd v (br)dss , t j t jmax. (*) current limited by package n typical r ds (on) = 0.0085 w n exceptional dv/dt capability n 100% avalanche tested n application oriented characterization description this power mosfet is the latest development of stmicroelectronics unique single feature size? strip-based process. the resulting transistor shows extremely high packing density for low on-resis- tance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable man- ufacturing reproducibility. applications n dc-dc converters n motor control, audio amplifiers n solenoid and relay drivers n automotive environment absolute maximum ratings ( l ) pulse width limited by safe operating area type v dss r ds(on) i d STW80NE06-10 60 v < 0.01 w 80 a(*) symbol parameter value unit v ds drain-source voltage (v gs = 0) 60 v v dgr drain-gate voltage (r gs = 20 k w ) 60 v v gs gate- source voltage 20 v i d drain current (continuos) at t c = 25c 80 a i d drain current (continuos) at t c = 100c 57 a i dm ( l ) drain current (pulsed) 320 a p tot total dissipation at t c = 25c 250 w derating factor 1.66 w/c dv/dt (1) peak diode recovery voltage slope 7 v/ns t stg storage temperature C65 to 175 c t j max. operating junction temperature 175 c to-247 1 2 3 internal schematic diagram
STW80NE06-10 2/8 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic r thj-case thermal resistance junction-case max 0.6 c/w r thj-amb thermal resistance junction-ambient max 30 c/w r thj-sink thermal resistance case-sink typ 0.1 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 80 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 350 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 60 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 10 a i gss gate-body leakage current (v ds = 0) v gs = 20v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250a 234v r ds(on) static drain-source on resistance v gs = 10v, i d = 40 a 0.0085 0.01 w i d(on) on state drain current v ds > i d(on) x r ds(on)max, v gs =10v 80 a symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i d =40 a 19 38 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs = 0 7600 pf c oss output capacitance 890 pf c rss reverse transfer capacitance 150 pf
3/8 STW80NE06-10 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 30v, i d = 40a r g = 4.7 w v gs = 10v (see test circuit, figure 3) 50 ns t r rise time 150 ns q g total gate charge v dd = 48v, i d = 40a, v gs = 10v 140 189 nc q gs gate-source charge 20 nc q gd gate-drain charge 50 nc symbol parameter test conditions min. typ. max. unit t d(off) off-voltage rise time v dd = 48 v, i d =40 a r g =4.7 w, v gs = 10v 45 ns t f fall time (see test circuit, figure 5) 75 ns t c cross-over time 130 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 80 a i sdm (1) source-drain current (pulsed) 320 a v sd (2) forward on voltage i sd = 80a, v gs = 0 1.5 v t rr reverse recovery time i sd = 80a, di/dt = 100a/s, v dd = 50v, t j = 150c (see test circuit, figure 5) 100 ns q rr reverse recovery charge 0.4 nc i rrm reverse recovery current 8 a safe operating area thermal impedence
STW80NE06-10 4/8 output characteristics gate charge vs gate-source voltage capacitance variations static drain-source on resistance transconductance transfer characteristics
5/8 STW80NE06-10 source-drain diode forward characteristics normalized drain-source breakdown vs temperature normalized on resistance vs temperature normalized gate thereshold voltage vs temp.
STW80NE06-10 6/8 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/8 STW80NE06-10 dim. mm inch min. typ. max. min. typ. max. a 4.7 5.3 0.185 0.209 d 2.2 2.6 0.087 0.102 e 0.4 0.8 0.016 0.031 f 1 1.4 0.039 0.055 f3 2 2.4 0.079 0.094 f4 3 3.4 0.118 0.134 g 10.9 0.429 h 15.3 15.9 0.602 0.626 l 19.7 20.3 0.776 0.779 l3 14.2 14.8 0.559 0.582 l4 34.6 1.362 l5 5.5 0.217 m 2 3 0.079 0.118 p025p to-247 mechanical data
STW80NE06-10 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroel ectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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